学术报告:Estimation of Pseudo H passivation energy and its applications in understanding polar surface, interface, and compound semiconductors

发布者:金霞发布时间:2017-12-28浏览次数:10

报告题目:Estimation of Pseudo H passivation energy and its applications in understanding polar surface, interface, and compound semiconductors

报 告 人:Prof. Junyi Zhu (朱俊宜),Department of Physics, Chinese University of Hong Kong

报告时间1229日下午2:00

报告地点:能源与材料研究院215会议室

报告人简历

      2009, Ph.D., Materials Science and Engineering, University of Utah, Salt Lake City

     1998, B.S., Physics, Peking University, Beijing, China

     2012- 2013   Postdoc fellow, University of Utah, Salt Lake City, UT.

     2009 - 2012   Postdoctoral researcher, National Renewable Energy Lab, Golden, CO

     08/2013 – now: Assistant professor, Physics Department, Chinese University of Hong Kong

Research interest:

First principles studies of electronic, magnetic, thermodynamic, and kinetic properties of defects, dopants, surfaces and interfaces in semiconductors and magnetic materials.

报告简介:

In this talk, I’ll briefly introduce our recent development of the new algorithm on the calculations of absolute formation energy of asymmetric polar surfaces of compound semiconductors. The new algorithm improved the accuracy of compound semiconductor polar surfaces energy for an order of magnitude comparing with the standard wedge method. Based on this new algorithm, the surface, interface, grain boundary formation energy, and the wetting condition of heterostructures can be estimated accurately. Further, a new strategy based on surfactant H tuning of GaN on ZnO substrate is proposed.