报告题目：Estimation of Pseudo H passivation energy and its applications in understanding polar surface, interface, and compound semiconductors
报 告 人：Prof. Junyi Zhu （朱俊宜），Department of Physics, Chinese University of Hong Kong
报告时间：12月29日下午2:00
报告地点：能源与材料研究院215会议室
报告人简历：
2009, Ph.D., Materials Science and Engineering, University of Utah, Salt Lake City
1998, B.S., Physics, Peking University, Beijing, China
2012- 2013 Postdoc fellow, University of Utah, Salt Lake City, UT.
2009 - 2012 Postdoctoral researcher, National Renewable Energy Lab, Golden, CO
08/2013 – now: Assistant professor, Physics Department, Chinese University of Hong Kong
Research interest:
First principles studies of electronic, magnetic, thermodynamic, and kinetic properties of defects, dopants, surfaces and interfaces in semiconductors and magnetic materials.
报告简介：
In this talk, I’ll briefly introduce our recent development of the new algorithm on the calculations of absolute formation energy of asymmetric polar surfaces of compound semiconductors. The new algorithm improved the accuracy of compound semiconductor polar surfaces energy for an order of magnitude comparing with the standard wedge method. Based on this new algorithm, the surface, interface, grain boundary formation energy, and the wetting condition of heterostructures can be estimated accurately. Further, a new strategy based on surfactant H tuning of GaN on ZnO substrate is proposed.